An expanded version
of this call for papers in
(includes invited speakers and Technical Program Committee members).
The goal of the workshop us to provide an international forum for thorough and broad-ranging discussion of the techniques for measurement, characterization and modeling of the one and two-dimensional aspects of ultra-shallow junctions, primarily in silicon devices. The focus of the workshop is on the limitations of present-day analytic techniques and on progress towards more advanced capabilities for the analysis of ever shallower and more abrupt doping profiles. This forum will review techniques that probe atomic composition and electrical activation of ultra-shallow junctions. Additional discussions will review the status of techniques for analysis of lattice damage profiles and analytic models that relate two-dimensional dopant distributions to enhanced dopant diffusion from the production of point defects. Papers are also encouraged on the interpretation and correlation of device characteristics with two-dimensional profiles. Special emphasis will also be on bringing together specialists in analytic methods with those who are developing atomic-level models of transient-enhanced dopant diffusion and activation. In addition, we encourage the participation of device engineers who are developing advanced technologies where two-dimensional profile control is critical. The goal here is to build a closer link between the data requirements for advanced silicon process and device modeling, the capabilities of analytic techniques, and the characteristics of ULSI devices.
The workshop will consist of invited review papers, contributed papers (in both oral and poster formats), and focused topical discussions. Plans are also underway to hold a short course program on Sunday, March 28, prior to the start of the workshop.
Papers are encouraged in all of the relevant topics described above, and in particular:
Sputter Depth Profiling: SIMS and post-ionization methods, techniques for enhanced depth resolution and dynamic range with an emphasis on 2D profiling.
Spreading Resistance Measurements and Other Characterization Methods: contact modeling, ultra-shallow beveling, extraction of carrier concentrations, C-V profiling, Hall profiling, PAD, TW, with an emphasis on 2D profiles.
Process Characterization and Modeling: Atomic profiles, implant damage, electrical activation, impurity, cluster and point defect modeling, with an emphasis on how lattice damage affects 2D diffusion.
Microscopy: SEM, TEM, STM/AFM, electrochemical etching methods, concentration resolution issues.
Device characterization: methods for determining effective channel length, 2D profile extraction from device characteristics, impact of 2D dopant profiles on devices.
The number of participants will be limited to approximately 200 to optimize opportunities for interaction.
Prospective authors should submit a 200 word abstract to the publications chair by September 15, 1998. Authors of accepted papers will be notified by November 1, 1998. Authors will submit a camera-ready paper for the proceedings volume (available at the conference) by January 1, 1999. The papers will be formatted according to a template which will be sent with the letter of acceptance and will be 6-8 pages in length, including text, figures, and references. Papers presented at the workshop will be reviewed for publication in the J. Vac. Sci. Technol.-B.
Technical Co-Chair: Richard B. Fair Department of ECE Duke University Durham, NC, 27708, USA Tel: 919-660-5277 Fax: 919-660-5221 Technical Co-Chair: Wilfried Vandervorst IMEC Kapeldreef 75 Leuven, B-3001, Belgium Tel: 32-16-281286 Fax: 32-16-281501 Publications Chair: Larry Larson SEMATECH 2706 Montopolis Austin, TX, 78741, USA Tel: 512-356-7145 Fax: 512-356-7640 Arrangements Chair: Gary McGuire MCNC PO Box 12889 Research Triangle Park, NC, 27709, USA Tel: 919-248-1910 Fax: 919-248-1455 For additional information, or if you would like to receive the Preliminary program when it is available, please contact: Angela Mulligan USJ-99 Registration Coordinator American Vacuum Society 120 Wall St, 32nd Floor NY, NY, 10005-3993, USA Tel: 212-248-0200 Fax: 212-248-0245
This page last updated July 1, 1998 by