Disclaimer: the following information is not necessarily
endorsed by UT or supported by Silvaco.
It seems like a natural thing to take the latest Monte Carlo ion
implant simulator and update the implant moment tables. That's
what the TCAD group at Micron has done, and has graciously donated
some results to the TCAD community. (Note: contributions are
welcome at this site).
A further disclaimer from Micron: "These are fitted profiles.
Extrapolations to the data can cause problems even though we didn't
see any during our limited testing."
You'll have to edit these tables slightly for use in TSUPREM-4.
Thanks to Micron.
*
* High Energy Phos and Boron Implant Parameters for use in Athena
* ---------------------------------------------------------------
*
* Created: June, 1998.
*
* TCAD Group, Micron Technology, R&D MS 306, Boise, ID 83706.
* contact email:
* ----------------------------------------------------------
*
* Extracted using ut-marlowe ver 4.1 and dupex ver 2.0 for
* energies: phos = 700 to 3000 keV.
* boron = 150 to 450 keV.
*
* ut-marlowe simulations were done for 4.5e12 dose (high energy
* model in ut-marlowe 4.1 doesn't include cummulative damage yet).
* Also, we used tilt=2 to reduce channelling -- zero tilt shows a
* lot of channeling).
*
* Limited testing of these params show reasonable results in
* comparison to SIMS data. More thorough checks (2D) are needed
* before general use.
*
* ----------------------------------------------------------
*
* This is a template for user-define implant tables.
*
* Notes: (1) Data must be in numerical order by energy.
* (2) Data for each energy must appear only once.
* EXCEPT AT THE INTERFACE FROM TWO PEARSON TO
* ONE PEARSON
*
* File format:
*
* column 1: Material identifier:
* 1 => silicon
* 2 => oxide (thermal or deposited)
* 3 => polysilicon
* 4 => silicon-nitride
* 5 => aluminum
* 6 => photoresist
* 7 => AMORPHOUS SILICON
* column 2: Element identifier:
* 1 => boron
* 2 => phosphorus
* 3 => arsenic
* 4 => antimony
* 5 => BF2
* column 3: Implant energy (en) (keV)
* column 4: Projected range (range) (microns)
* column 5: Vertical projected standard deviation (std.dev) (microns)
* column 6: Skewness or third moment ratio (gamma) (no units)
* column 7: Kurtosis or fourth moment (kurtosis) (no units)
* column 8: Lateral Standard deviation (lstd.dev) (microns)
* column 9: Mixed moment /DRP**(3/2) (lgamma) (no units)
* column 10: Mixed moment /DRP**2 (lkurtosis) (no units)
*
* columns 11 - 17: Parameters for the second Pearson curve
*
* column 11: Projected range (srange) (microns)
* column 12: Vertical projected standard deviation (sstd.dev) (microns)
* column 13: Skewness or third moment ratio (sgamma) (no units)
* column 14: Kurtosis or fourth moment (skurtosis) (no units)
* column 15: Lateral Standard deviation (lsstd.dev) (microns)
* column 16: Mixed moment /DRP**(3/2) (lsgamma) (no units)
* column 17: Mixed moment /DRP**2 (lskurtosis) (no units)
*
* COLUMN 18-23: RATIO (DOSE1/TOTAL) AT EACH TOTAL DOSE: 1E11 2E13 5E14 2E15 1E16 1E17
*
* Example6: Double Pearson (no dose dependency is specified, DRATIO will be 0.833 for all doses;
* Mixed moments for the second Pearson profile are set to 0.0 which means that
* FULL.LAT model will be ignored for the second Pearson).
* en range std.dev gamma kurt lstd.dev skewxy kurtxy kurtt srange sstd.dev sgamma skurt lsstd.dev sskewxy skurtxy skurtt drat1
*
* Material: CRYSTALLINE Silicon [1]
* Element : phosphorus [2]
*
* Example6: Double Pearson (no dose dependency is specified, DRATIO will be 0.833 for all doses;
* Mixed moments for the second Pearson profile are set to 0.0 which means that
* FULL.LAT model will be ignored for the second Pearson).
* en range std.dev gamma kurt lstd.dev skewxy kurtxy kurtt srange sstd.dev sgamma skurt lsstd.dev sskewxy skurtxy skurtt drat1
1 2 700 0.91 0.21 0.3 3.8 0.21 0 0 3.0 1.36 0.30 -0.4 3.7 0.30 0.0 0.0 3.0 0.7199
1 2 800 0.98 0.21 0.3 3.7 0.21 0 0 3.0 1.4 0.32 -0.35 3.5 0.32 0.0 0.0 3.0 0.6805
1 2 900 1.04 0.21 0.3 3.6 0.21 0 0 3.0 1.48 0.33 -0.26 3.3 0.33 0.0 0.0 3.0 0.6606
1 2 1000 1.10 0.21 0.2 4.0 0.21 0 0 3.0 1.55 0.34 -0.236 3.2 0.34 0.0 0.0 3.0 0.6499
1 2 1100 1.16 0.21 0.001 4.5 0.21 0 0 3.0 1.63 0.34 -0.21 3.2 0.34 0.0 0.0 3.0 0.641
1 2 1500 1.4 0.22 -0.876 5.0 0.22 0 0 3.0 1.9 0.315 -0.13 3.29 0.315 0.0 0.0 3.0 0.62
1 2 1600 1.454 0.218 -0.876 5.0 0.218 0 0 3.0 1.97 0.316 -0.0216 3.316 0.316 0.0 0.0 3.0 0.62
1 2 2000 1.67 0.21 -0.876 5.0 0.21 0 0 3.0 2.25 0.32 0.412 3.42 0.32 0.0 0.0 3.0 0.62
1 2 2100 1.728 0.209 -0.876 5.0 0.209 0 0 3.0 2.31 0.321 0.4158 3.425 0.321 0.0 0.0 3.0 0.6198
1 2 2500 1.96 0.205 -0.876 5.0 0.205 0 0 3.0 2.55 0.325 0.431 3.447 0.325 0.0 0.0 3.0 0.619
1 2 2600 2.018 0.204 -0.876 5.0 0.204 0 0 3.0 2.61 0.326 0.471 3.531 0.326 0.0 0.0 3.0 0.6178
1 2 3000 2.25 0.2 -0.876 5.0 0.2 0 0 3.0 2.85 0.33 0.631 3.867 0.33 0.0 0.0 3.0 0.613
*
* Material: CRYSTALLINE Silicon [1]
* Element : boron [1]
*
* Example6: Double Pearson (no dose dependency is specified, DRATIO will be 0.833 for all doses;
* Mixed moments for the second Pearson profile are set to 0.0 which means that
* FULL.LAT model will be ignored for the second Pearson).
* en range std.dev gamma kurt lstd.dev skewxy kurtxy kurtt srange sstd.dev sgamma skurt lsstd.dev sskewxy skurtxy skurtt drat1
1 1 150 0.50 0.105 0.1 4.0 0.105 0 0 3.0 0.7 0.115 -0.485 3.2 0.345 0.0 0.0 3.0 0.62
1 1 200 0.60 0.118 0.1 4.5 0.112 0 0 3.0 0.84 0.12 -0.485 3.3 0.36 0.0 0.0 3.0 0.6696
1 1 250 0.71 0.13 0.1 5.0 0.12 0 0 3.0 0.95 0.12 -0.485 3.5 0.38 0.0 0.0 3.0 0.6997
1 1 300 0.80 0.13 0.1 5.0 0.12 0 0 3.0 1.06 0.12 -0.485 3.2 0.40 0.0 0.0 3.0 0.7308
1 1 350 0.86 0.11 -0.5 5.0 0.125 0 0 3.0 1.10 0.15 -0.60 3.5 0.48 0.0 0.0 3.0 0.5795
1 1 400 0.93 0.10 -0.6 5.0 0.13 0 0 3.0 1.15 0.19 -0.60 4.3 0.57 0.0 0.0 3.0 0.4905
1 1 450 1.00 0.10 -0.8 5.0 0.136 0 0 3.0 1.22 0.20 -0.60 3.9 0.60 0.0 0.0 3.0 0.4202
*